1.5μm InP/InGaAs MQW-LD驱动电路的设计

The Design of HBT Driver Circuit for 1.5μm InP/InGaAs OEIC Lightwave Transmitter

讨论了由4个InP/InGaAs HBT构成的OEIC光发射机驱动电路的设计。研究结果表明.由最佳性能的HBT构成的驱动电路,其性能不一定就是最佳的,驱动电路的性能与激光器的串联电阻有很大关系。本文对激光器的串联电阻为9Ω的情况,从几何参数优化设计一驱动电路,其调制带宽可达3.4GHz,脉码凋制时。开关时间约为100ps。用它驱动一多量子阱激光器,脉码调制时,光信号响应开头时间约为288ps。

The design of an OEIC lightwave transmitter driver circuit composed of four InP/InGaAs HBTs is discussed in this paper. It is shown that the high fre-quency characteristics of the driver circuit composed of optimum HBTs is not neces-sarily optimum,the effect of series resistance of LD on the high frequency characteristics of the driver circuit is very evident. An optimum driver circuit is designed for 9 n series resistance ,its small-signal modulation bandwidth is 3. 4 GHz, switch time is 100 ps. Using this driver circuit to drive a MQW-LD,288 ps switch time is achieved.