摘要
介绍了微波低噪声ＧａＡｓＦＥＴ恒定应力加速寿命试验结果，沟道温度Ｔｃｈ为１４５℃时，平均寿命ＭＴＴＦ为９．６４×１０＾６ｈ，最主要的失效模式是源漏饱和电流ＩＤｓｓ退化降低。建立了表征ＧａＡｓＦＥＴ稳定性的敏感参数ＩＤｓｓ的退化模型ＩｎＰ＝α＋ｂｌｎｔ，分析了ＩＤｓｓ退化与温度应力的加速关系。提出了快速推断器件可靠性的建议。
The result of accelerated life test of microwave low-noise GaAs FET under constant stress is described in this paper. Average lifetime, MTTF, of the tested GaAs FET at channel temperature of 145 C is 9. 64 x 106 h. The main failure mode is the degradation of drain-source saturated current IDSS. A degradation model of the sensitive parameter IDSS, InP=a+blnt,has been created to characterize the stability of the GaAs FET. Acceleration relation of the IDSS degradation to the temperature stress is analyzed. A suggestion for fast deducing the reliability of the de-vice has been proposed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1993年第4期367-373,共7页
Research & Progress of SSE
关键词
可靠性
失效分析
微波器件
试验法
Reliability,Failure Analysis. Degradation Model. Sensitivity Parameters
