浅结工艺研究及其在0.5μmCMOS集成电路中的应用

Shallow Junction Technologies and Their Applications in 0. 5μm CMOS ICs

采用低能量的砷离子注入和可抑制沟道效应的硅表面预先无定形技术,分别得到了0.13μm N^+/P结和0.17μm P^+/N结,并应用于0.5μm CMOS集成电路的制造。

0.13μm N+/P shallow junction formed with the use of low energy As implantation technology and 0.17μm P+/N shallow junction formed by Si prcamor-phased technology which can supprcss channel effect have been developed, and their applications to 0. 5μm CMOS ICs have been reported.