δ掺杂样品中空穴态的新行为

Novel Behavior of Hole States in δ Doped Sample

用有效质量理论研究了δ掺杂势中电子和空穴的行为。发现能量接近于δ势垒峰的空穴穿越势垒时能产生一系列谐振态。这些状态中的空穴波函数汇聚在势垒峰周围而同量子限制在势阱中的电子波函数交叠,产生光跃迁。用MBE生长的δ掺杂样品进行光调制光谱测量,发现明显的带间跃迁峰。测得的光谱峰同理论计算的能级相吻合,证实了δ势垒中空穴的新行为。

The behavior of electrons and holes in o doped potential is investigat-ed by the effective mass theory. It is found that a set of resonant scattering states are induced if the energies approach to the S potential peak. The hole wave function for these states is concentrated around the potential peak and is over lapped with the electron wave function in d potential well so that the corresponding photo-tran-sition can be induced. Some obvious interband transition peaks have been observed by the modulated photo-reflection spectrum for S doped sample grown by MBE. The measured spectrum peaks agree with the calculated transitions, which demon-strates the novel behavior of hole states in S potential barrier.