集成真空微电子器件的研究及展望

R&D Trend of Integrated Vacuum Microelectronic Devices

概述了集成真空微电子器件的基本理论、特性、工艺制备及发展现状。现在集成真空场发射阵列的发射电流密度可做到1×10~3A/cm^2,单个锥尖跨导为5.0μS。对于锥尖密度为1×10~7锥尖/cm^2,总跨导可以达到50S/cm^2。一种新的采用真空微电子技术的微带放大器,在频率1THz 下能输出功率1～50W。指出真空微电子技术将是设计和制备新型亚微米器件的有效方法。

The basic theory,characteristics,fabrications and developing status of in- tegrated vacuum microelectronic devices are briefly reviewed.The integrated vacuum field emission arrays now provide emission current density of about 10~3A/cm^2 and transconduc- tion of about 5.0μS/tip.A new microstrip amplifier empolying vacuum microelectronic technlogy provides 1～50 W output power at up to 1 THz.