InP/InGaAsP1.3μm弯曲波导吸收区超辐射发光二极管的计算机辅助分析

CAA for 1.3μm InP/InGaAsP SLD with a Buried Bent Absorbing Guide Structure

本文用束传播法对具有弯曲波导吸收区的超辐射发光二极管进行了计算机辅助分析,研究了有源层厚度、波导宽度、吸收区长度、弯曲波导曲率半径对器件性能的影响。研究结果表明,对于该器件,存在最佳结构参数,使得吸收区对光激射的抑制作用最好。

A DCPBH-SLD has been analyzed by BPM. The effects of active layer thickness,wave guide width,absorbing region length and bent guide radius on characteristics of this device are studied. Optimum device dimension parameters for the SLD can be chosen for effectively suppressing lasing.