摘要
多孔硅在空气中自然氧化形成Si—O—Si键,引起晶格畸变,导致有序度下降,氧化层用HF去除,有序度可恢复。大束流电子束辐照直接引起晶粒无序化,其有序度不能在HF浸泡中恢复。
In air, the porous silicon is spontaneously oxidized and Si-O-Si bonds are formed,which introduced the distortion of the lattice and caused the disordering in the crystallites.When the native oxide is removed by I-IF etching, the ordering can be restored. But under irradiationof the electron beam, the crystallites disorder gradually and the ordering can not berestored by the brief etch in HF.
基金
国家自然科学基金
关键词
氧化
多孔硅
微结构
电子束辐照
Etching
Order disorder transitions
Oxidation
Porous materials
