离子注入甜菊种子效应初报

Preliminary Study on Effects of Ion Implantation on Stevia Seeds

甜菊种子用Ｎ离子束照射（能量３５～１００ｋｅＶ，剂量１０１３～１０１６／ｃｍ２）经二年试验看出，Ｎ离子注入可促进生长，与对照相比，最优处理剂量１０１３／ｃｍ２的株高、节数、叶片数、干叶重及茎根干重分别提高２２％、１０％、３８％、５４％、８１％，植株茎粗及单株叶面积分别提高１４％及４７％，单株产量提高１２％，小区产量增加４１％，总糖甙含量提高２．８度，优质糖莱包迪Ａ甙含量提高１．８８度，总产糖量增加８３％，莱包迪Ａ糖产量增加１６２％。本文还就其诱变机理与γ射线处理区别进行了讨论。

After implantation of N+ ion with 3 5 keV/amu under the dose for 1013/cm2 into steviaseeds,plant height,node number,leaf number,dry leaf weight,dry weight of stem and root in-creased by 22%,10%,38%,54%and 81%respectively.Stem wide of plant,leaf area of perplant,yield of per plant,yield of the plot increased by l4%, 47%,12%and 4l%respectively.Content of total stevioside and good quality rebaudioside A increased by 2.8 and 1.88 degree re-spectively .The yield of total stevioside and rebaudioside A increased by 83%and 1 6%respec-tively. The problem of its mutation mechanism and the differences between ion implantation andγ-ray irradiation were also discussed in this paper。