在（311）面上所生长的Al_xGa_（1－x）As／GaAs单量子阱特性

Study on Properties of Al_xGa_(1-x)As/GaAs Single Quantum Well Grown on(311)GaAs Substrates

文章报道了用分子束外延（ＭＢＥ）法在６００℃和６５０℃下，在Ｓｉ掺杂的ＧａＡｓ衬底的（３１１）Ａ和（３１１）Ｂ面上成功地生长了高质量的ＡｌｘＧａ１－Ａｓ／ＧａＡｓ单量子阱材料。计算了光荧光（ＰＬ）峰值能量，并与实验作了比较。讨论了（３１１）Ａ和（３１１）Ｂ面上的不同生长特性。

High quality AlxGa1-xAs/GaAs single quantum well have been successfully grown on (311)A and (311)B Si-doped GaAs substrates by molecular beam epitaxy (MBE)at 600℃ and 650℃. The photoluminescence (PL) peak energies are calculated and compared with that of experimental results. The different properties of growth on (311)A and (311)B GaAs substrates are discussed as well.