沟道SI－GaAs衬底上正装GaAlAs／GaAs　BH激光器的制作

Fabrication of Up-mounted GaAlAs/GaAs BH Lasers on Channelled SI-GaAs Substrates

介绍了宽沟道ＳＩ－ＧａＡｓ衬底上的ＢＨ激光器的制作，全部结构由两次外延形成，阈值电流为５５ｍＡ。在Ｉ＝２Ｉｔｈ时，Ｐ－Ｉ曲线仍保持良好的线性关系。

The fabrication of a BH laser on wide channel SI-GaAs substrate is introduced which is grown with two steps of epitaxy.The threshold of the laser is so mA with excellent linearity of P-I curve at I=2Ith.