摘要
设计并研制成功了实用型５ＧＨｚ带宽ＩｎＧａＡｓ／ＩｎＰＰＩＮ光电探测器，介绍了限制探测器响应速度的主要因素、微波封装的理论依据，以及所研制器件频率响应的测试结果。
A practical high speed InGaAs/InP PIN photodiode applicable to 5GHz has been succesfully designed and fabricated.The factors that restrict the speed of photodiodes and the principle of microwave packaging are presented,followed by description of the result of the frequency response.of the device we fabricated.
出处
《半导体光电》
CAS
CSCD
北大核心
1994年第1期59-63,共5页
Semiconductor Optoelectronics
