摘要
描述用SOI技术制造的光耦合MOS继电器和多量子阱长波长红外探测器,以及集成异质结晶体管和激光二极管于一体的高增益、高灵敏的光电子开关器件。文中着重介绍这些器件的结构、制造工艺和器件特性,并对其进行了讨论。
This paper describes some newly developed optoelectronic devices such as optical coupling MOS relays made by SOI technology,multiple quantum-well(MQW) longwavelength infrared(LWIR) detectors,and high gain and sensitive photonic swithing devices integrating heterojunction phototransistors with laser diodes.The structures,fabrication technology and characteristics of these devices are presented.
出处
《半导体光电》
CAS
CSCD
北大核心
1994年第1期28-35,共8页
Semiconductor Optoelectronics
关键词
红外探测器
多量子阱
光电器件
Infrared Detection
Multiquantum-well
SOI Technology
MOS Relay