1M Sweet,O Spulber,J V Subhas. Clustered insulated gate bipolar transistor:a new power semiconductor device[J].IEE Proc -Circuits Devices Syst,2001,(02):75-78.
2N Luther-King,E M S Narayanan,L Coulbeck. Comparison of Trench Gate IGBT and CIGBT Devices for Increasing the Power Density from High Power Modules[J].IEEE Transactions on Power Electronics,2010,(03):583-591.
3A Balachandran,M Sweet,L Ngwendson. Enhanced short-circuit performance of 3.3 kV Clustered Insulated Gate Bipolar Transistor(CIGBT)in NPT technology with RTA Anode[A].Bruges,Belgium,2012.169-172.
4V A K Temple. MOS-Controlled Thyristors-A New Class of Power Devices[J].IEEE Transactions on Electron Devices,1986,(10):1609-1618.
5A Ramamurthy,S Sawant,B J Baliga. Modeling the [dV/dt] of the IGBT During Inductive Turn Off[J].IEEE Transactions on Power Electronics,1999,(04):601-606.
