摘要
介绍了近几年磷化铟合成及其单晶生长的进展情况。对提高晶体成晶率、降低缺陷密度、改善晶体的热稳定性等新工艺、新技术进行了分析比较，并论述了磷化铟单晶生长技术的发展趋势及其应用前景。
The development of synthesis and single crystal growth of InP in re-cent years is surveyed.The technologies which are to increase the single crystal yields,reduce the defect density,and improve the thermal stability of InP single crystal are analysed and compared. And the developing trends and the applica-tion of InP single crystal are also described.
出处
《半导体情报》
1994年第2期8-16,共9页
Semiconductor Information
