摘要
从热稳定条件出发,对扩散镇流电阻的设计进行了详细的计算和分析,讨论了在保证器件增益前提下提高器件热稳定性的措施,器件应用显示出了良好的结果,最后提出了一种新的没有热崩现象存在的高可靠器件的设想。
From the thermal stability condition,a thorough analysis is pre-formed for the desigh of diffused emmitter ballasting resistor.Several methods to approve the stability are disscussed and used in the desigh of a microwave power linear transistor with good results,Finally a novel highly reliable tran-sistor without thermal breakdown is proposed in the paper.
出处
《半导体情报》
1994年第3期11-15,共5页
Semiconductor Information
关键词
功率晶体管
镇流电阻
热稳定性
Microwave power transistor,Ballasting resistor,Thermal stability