摘要
描述了高电子迁移率晶体管的作用、工作原理及发展概况，叙述了器件特性。制作出了栅长为１μｍ的ＰＨＥＭＴ样品，它的最大跨导为１７０ｍＳ／ｍｍ，击穿电压为４Ｖ，最大电流密度为２７０ｍＡ／ｍｍ，阈值电压为１．５Ｖ。
The use, principle of operation,and developing trends of a pseudo-morphic HEMT are reported. We have fabricated a sample with 1μm gate length. The devices exhibit a maximum transconductance of 170mS/mm,a breakdown voltage of 4V and a maximum current density of 270 mA/mm,and a threshold voltage of 1.5V.
出处
《半导体情报》
1994年第4期12-16,共5页
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