2英寸高均匀性GaAs多层外延材料

2in Diameter GaAs Polylaminate Epitaxial Material With Excellent Uniformity

用法国进口的ＧａＡｓＶＰＥ设备，采用ＡｓＣｌ）３／Ｈ＿２／Ｇａ体系，以ＳｎＣｌ＿４ｌ／ＡｓＣｌ＿３为掺杂液，生长了２英寸多层ＧａＡｓ外延材料，自行设计了反应器的热场分布，在反应器中增加了合适的搅拌器，用以改变反应器中气体流动情况。ＧａＡｓ外延层的浓度均匀性与厚度均匀性均小于５％。浓度均匀性的最佳值为３．７％，厚度均匀性的最佳值为１．５％，当外延层载流子浓度为１．９×１０￣（１７）ｃｍ￣（－３）时，室温迁移率达到４３９０ｃｍ￣２／Ｖ·ｓ。

In the GaAs VPE equipment made by ASM company of France, 2in diameter polylaminate GaAs epitaxial material with SnCl_4/AsCl_3 doped by the AsCl_3/H_2/Ga system was grown. We designed the heat field distribution of the reactor, and utilized the suitable stirrer for changing the gas flow in reac-tor. Both the uniformity of GaAs epitaxial layer of the concentration and that of the thickness are lower than 5%. The best values of the uniformities of the concentration and thickness are 3.7%and 1.5%respectively. When the con-centration in active layer is 1. 9× 10￣(17)cm￣(-3), the mobility is 4390 cm￣2/V·s at room temperature.