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P埋层技术研究 被引量：1

Technical Research of p Buried Layer
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摘要 介绍了在Ｓｉ￣＋注入的ｎ－ＧａＡｓ沟道层下面用Ｂｅ￣＋或Ｍｇ￣＋注入以形成ｐ埋层。采用此方法做出了阈值电压０～０．２Ｖ，跨导大于１００ｍＳ／ｍｍ的Ｅ型ＧａＡｓＭＥＳＦＥＴ，也做出了夹断电压－０．４～－０．６Ｖ、跨导大于１００ｍＳ／ｍｍ的低阈值Ｄ型ＧａＡｓＭＥＳＦＥＴ。 A p buried layer formed by implanting Be￣+or Mg￣+ in n-GaAs chan-nel layer with Si￣+ implantation is presented. Using this method, we have ma-nufactured E type GaAs MSEFET with its threshold voltage of 0～0. 2V, and transconductance greater than 100mS/mm.A low threshold D type GaAs MESFET with pinch voltage of-0.4～-0. 6V and transconductance greater than 100mS/mm has been achieved.
作者 廉亚光 郝景晨 郑晓光
机构地区 CaAsIC国家重点实验室
出处 《半导体情报》 1994年第6期12-15,共4页 Semiconductor Information
关键词 P埋层 砷化镓 增强型 耗尽型 场效应晶体管 p buried layer,GaAs,E-MESFET,D-MESFET
分类号 TN386 [电子电信—物理电子学]
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同被引文献11

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  • 5SUGAYA T,MAKITA K,MIZUNO H,et al.MBE-grown In Ga P/Ga As/In Ga As P triple junction solar cells fabricated by advanced bonding technique[C]//Proceedings of the 40thPhotovoltaic Specialist Conference.Denver,CO,USA,2014:0542-0545.
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  • 7GARCIA I,REY-STOLLE I,ALGORA C.Performance analysis of Al Ga As/Ga As tunnel junctions for ultra-high concentration photovoltaics[J].Journal of Physics:D,2012,45(4):45101-1-45101-8.
  • 8WHEELDON J F,VALDIVIA C E,WALKER A W,et al.Performance comparison of Al Ga As,Ga As and In Ga P tunnel junctions for concentrated multijunction solar cells[J].Progress in Photovoltaics Research&Applications,2011,19(4):442-452.
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半导体情报
1994年 第6期

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