摘要
对ＷＳｉ＿ｘＮ＿ｙ薄膜的制备工艺以及Ｎ＿２分压对ＷＳｉ＿ｘＮ＿ｙ膜的组分、结构、应力、电阻率等方面的影响作了分析研究。尝试性地对淀积完毕真空室中充Ｎ＿２造成靶面氮化的情况作了实验分析。ＡＥＳ测试了膜的组分，ＸＲＤ分析了膜的结构，四探针法测得膜的电阻率。
The deposition process of WSi_xN_y film and the effect of N_2 partial pressure on the composition, structure, stress and resistance of the WSi_xN_y film were studied. An investigation was made for the W_5Si_3 target nitrogened by venting N_2 after deposition.The composition, structure, resistance of WSi_xN_y film were measured by AES, XRD,four probe respectively.
出处
《半导体情报》
1994年第6期24-28,共5页
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