硅表面氧化膜的X光电子谱及部分参数固定法曲线拟合

XPS Study of Silicon Oxide Film and Partial Parameter Fixed Curve Fitting

本文用Ｘ光电子谱及部分参数固定曲线拟合方法分析了热生长硅氧化膜和硅的自然氧化膜中硅和氧的结合状态，发现两者均不是单一的ＳｉＯ２，硅在以上两种氧化膜中共有四种氧化状态，即Ｓｉ＋１，Ｓｉ＋２，Ｓｉ＋３和Ｓｉ＋４，它们相对于体Ｓｉ２ｐ，峰的化学位移分别为０．８５，２．３５，３．５５和４．６０ｅＶ．在硅的初期氧化阶段无Ｓｉ＋４成分出现．

AbstractThe chemical bonding states of silicon in natural silicon oxide film and in the thermal grown thick oxide film were studied by using X-ray photoelectron with partial parameters fixed curve fitting technique. It is shown that there are four oxidation related peaks for silicon 2p photoemission. The silicon 2p chemical shifts are 0.85, 2.35, 3.55, and 4.60eV, respectively, related to the substrate silicon 2p peak. There is no Si+4 component in the early stages of silicon oxidatioa.