摘要
对栅氧化后３０ｋｅＶ与４３ｋｅＶＦ离子注入的Ｐ沟ＭＯＳＦＥＴ进行了电离辐射响应特性的比较．结果发现，３０ｋｅＶ注Ｆ具有较强的抑制辐射感生氧化物电荷和界面态增长的能力．用３０ｋｅＶ注Ｆ具有较少注入缺陷的模型对实验结果进行了讨论．
AbstractIonizing radiation responses of P-channel MOSFETs with 30keV and 43 keV fluorine implantation after gate oxidation have been compared. The results show that the MOSFETs with 30keV F implantation behave more obvious characteristics restraining radiation-induced oxide charges and interface states. The experimental results have been explained a model-30keV F implantation Garryiag less implantation defects into gate oxides.
