摘要
我们首次完全采用ＭＢＥ技术成功地制作了内含吸收型光栅的ＧａＡＩＡｓ／ＧａＡｓ量子阶增益耦合型分布反馈式半导体激光器．激光器在室温下的激射波长为８６０ｕｍ，单模单端输出光脉冲峰值功率超过２０ｍＷ．器件在至少０℃到８０℃的范围内始终保持单纵模激射．作为初步结果，条宽为５～６μｍ的氧化物条形结构器件的脉冲工作阈值电流约为７００ｍＡ．
Abstract GaAIAs/GaAs multiquantum well gain-coupled distributed feedback (DFB)lasers with conduction-type-inverted loss gratings are fabricated using molecular beamepitaxy technique for the first time. At room temperature, single mode operationwith lasing wavelength of 860 urn and high power of 20 mW has been achieved un 0der pulse conditions. DFB mode oscillation maintains at least within a temperaturerange from 0℃ to 80℃. As a primary result, a pulsed threshold current of 700 mAis obtained.
关键词
半导体激光器
量子阱
GAALAS/GAAS
Diffraction gratings
Molecular beam epitaxy
Semiconducting gallium compounds
