摘要
本文用掠入射全反射Ｘ射线衍射，结合常规Ｘ射线衍射，对ＧａＡｓ／ＧａＰ应变层界面进行了研究，给出了界面关配度、薄膜晶胞的畸变和界面弛豫等结构参数．结果表明掠入射衍射（ＧＩＤ）是测定半导体薄外延膜界面结构的有效工具．
Abstract The interfaces of strained layers GaAs/GaP are investigated by means ofX-ray grazing incidence diffraction under total external reflection conditions,combi ned with regular X-ray diffraction. The distortion of the thin films,the parametersof mismatch and relaxation of the interface are established. The results show thatgrazing incidence diffraction (GID) is a powerful tool for determining the interfacestructure of semiconductor epitaxial thin films.
基金
国家自然科学基金
关键词
砷化镓
磷化镓
X辐射
衍射分析
Diffraction
Epitaxial growth
Interfaces (materials)
Thin films
X rays
