摘要
本文首次报道用光调制光谱（ＰＲ）研究了Ｃｄ１－ｘＭｎｘＴｅ／ＧｄＴｅ半磁半导体多量子阱的能带结构和带间跃迁，观察到多量子阱的各子能级激子跃迁１１Ｈ．１１Ｌ，２２Ｈ，３３Ｈ等，并得到轻重空穴分裂为１８ｍｅＶ．当能带偏移Ｑｃ＝０．９０时，理论计算的子带跃迁能量与调制光谱结果符合很好．发现低温时第二子能级跃迁比第一子能级跃迁更强，并给出了初步解释，通过变温测量，测得各子能级的温度系数并与纯ＣｄＴｅ及Ｃｄ１－ｘＭａｘＴｅ混晶体材料的温度系数作了比较．
Abstract We report the photoreflectance (PR) spectroscopy of interband excitonic transitions for semimagnetic semiconductor Cd1-xMnx Te/CdTe multiple quantum wells (MQWs) for the first time. The heayy-and light-hole interband excitonic transitions 11H, 11L, 22H and 33H are observed. The heavy-/light-hole splitting of 18 meV is obtained. The PR results are compared with calculations of the energy levels by envelope function method, and the conduction band offset Qc is about 0.9. The temperature dependence of these excitonic transitions is studied and compared with those in the bulk CdTe and Cd1-xMnx Te alloy.
