SiGe／Si量子阱结构材料的激子发光谱

Photoluminescence Spectra from SiGe/Si Strained Layer Quantum Well Structures

在用分子束外延生长的ＳｉＧｅ／Ｓｉ多量子阱结构中，观察到激子发光光谱，从无声子参与的或ＴＯ－声子参与的激子发光峰位能量，计算了量子阱中合金的组份，并与通过Ｘ－射线衍射谱得到的结果作了比较，发现在Ｇｅ的组份比较小时，利用激子发光峰位能量确定合金组份比利用Ｘ－射线衍射谱更为方便和精确．

Abstract The excitonic transitions were observed in photoluminescence spectrum from SiGe/Si strained layer quantum well structure grown by solid source molecular beam epitaxy. From the peak energy of no-phonon or TO-phonon exciton line, the Ge composition in quantum well layers was determined. The result was compared with that obtained from the X-ray diffraction spectrum, and we found that it is easier and more accurate to determine the alloy composition from the excitonic photoluminescence spectra than from X-ray diffraction measurements for the structures with small Ge composition.