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热壁MOCVDHg_(1-x)Cd_xTe中的Hg蒸汽压和分配比 被引量:1

Vapor Pressure and Distribution Coefficient of Hg in Hot Wall MOCVD HgCdTe
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摘要 本文改进和设计了新型可移动式加热电阻炉和反应器,避免了二乙基碲(DETe)与二甲基镉(DMCd)的直接反应,减了预沉积,在Te/Cd比的控制更为准确的条件下重复稳定地获得了x=0.2响应波长为10.6μm的Hg1-xCdxTe材料.其中有关组份x值的实验结果首次证明与Kisker的热力学模型基本相符. Abstract An improved movable resistance furnace with a new reactor has been designed and assembled for MOCVD of HgCdTe.Due to the diminution of the predeposition reaction between DETe and DMCd in the reactor and the parasitic reaction on reactor wall,the Hg vapor pressure may be approximately close to its saturation vapor pressure and the Te/Cd ratio is easily controlled. The Hg(1-x)CdxTeepilayers with x=0.2 were reproducibly obtained.The solid composition in Hg(1-x)CdxTe can be verified by Kisker's thermodynamic calculation model. The typicalHg(0.8)Cd(0.2)Te epilayers have FWHM of 250 arcsec in DCXD spectra, carrier concentration of 2× 10(16)cm(-3) with the mobility of 9.2×104cm2/V.s,and infrared transmission of 70%.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1994年第4期264-267,共4页 半导体学报(英文版)
关键词 碲镉汞材料 蒸气压 MOCVD 分配比 Chemical vapor deposition Electric furnaces Mercury compounds
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参考文献5

  • 1丁永庆,1992年
  • 2Xu Fei,Rare Met,1992年,11卷,13页
  • 3丁永庆,Rare Met,1992年,11卷,102页
  • 4彭瑞伍,金属学报,1965年,8卷,897页
  • 5陈记安

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