摘要
本文报道γ辐照的ＧａＡｓ：Ｃｒ的光激发电子顺磁共振（ＥＰＲ）研究结果．实验结果表明γ辐照不仅改变了其内硅谱线的光淬灭特性，同时还产生一条ｇ值为２．０８、线宽约３×１０－２Ｔ无光淬灭特性的新谱线，初步分析表明它可能来自于砷空位（ＶＡｓ）．
Abstract The EPR study of gamma-ray irradioted SI GaAs:Cr is reported.The.experimental results show that gamma irradiations not only change the photo-quenching behavior of Si line but also induce a new spectrum of g=2.08 and linewidth3×10(-2)T. The new spectrum is isotropic and has no photo-quenching beharior.Our preliminary Stady Shows that the new spectrum may be related to the VAs.
基金
国家自然科学基金
关键词
r辐射
顺磁共振
GaAs:Cr
Electron optics
Gamma rays
Paramagnetic resonance
Radiation effects
