一种新型结构的LB膜化学场效应晶体管的气敏特性研究

Study on Vapor-Sensitivity of LB Film ChemFET with New Structure

合成了新型的有机半导体ＬＢ膜气敏材料（ＣＯＴＤＭＡＰＰ），其ＬＢ多层膜拉制在场效应晶体管上，形成了具有ＬＢ－ＯＳＦＥＴ结构的化学场效应晶体管（ＣｈｅｒｎＦＥＴ），该器件置于ＮＯ２，ＮＨ３，ＣＯ和Ｈ２Ｓ等有害气体中，结果表明在ＮＯ２气氛中元件漏电流ＩＤＳ发生变化，并可检测到２ｐｐｍ的ＮＯ２．这种器件的气敏特性在于ＦＥＴ的电流放大作用及ＬＢ膜的有序性的影响．

Abstract Cobalt tetra-(N,N-dimethylhexadecyl p-aminophenyl) porphyrins (CoTDMAPP) Langmuir-Blodgett(LB) films were deposited on field-effect transistor(FET)and forming a chemical FET(ChemFET)having the structure of LB-OSFET.The process of the interaction between the ChemFET and ambient gas was studied.Results are presented showing the extreme sensitivity of their drain current(IDs)only to ambient gas such as nitrogen dioxide(NO2)when exposed to the toxic gascs NO2,NH3,CO and H2S.The ChemFET consisting of CoTDMAPP LB film andFET cab detect NO2 gas down to 2ppm in air;the qualities are attributed to amplification by the FET and the ordered nature of LB film.