摘要
实验研究了微氮硅单晶在７００℃，１０５０℃单步退火及二步退火的氧沉淀，指出破、氮杂质对低温退火生成的氧沉淀有明显促进作用，而对中温退火的氧沉淀基本没有影响，主要取决于原始氧浓度．实验还研究了低温预退火促进氧沉淀及氧沉淀延迟现象，探讨了碳氮杂质在氧沉淀中的作用．
Abstract The oxygen precipitation in N-doped silicon annealed at 700℃ and 1050℃ has been studied. The experiments suggest that carbon, nitrogen impurities and original oxygen precipitates enhance the formation of oxygen precipitate nuclei at lower temperature, but do not effect on the one at higher temperature. The properties of oxygen precipitates in low-high two step annealing have also been discussed. It is considered that carbon and nitrogen impurities in N-doped silicon enhance the nucleation of oxygen precipitates as heterogeneous nuclei, but do not effect on the growth of oxygen precipitates.
基金
国家自然科学基金
