摘要
在ＧａＡｓ－ＡｌｘＧａ１－ｘＡｓ异质结中，我们观察到二维热电子的负磁阻效应，随着电场强度的增加，负磁阻效应增强，对我们的样品而言，Δσ／σ（０）的幅度可达２０％以上．一个简单的理论分析表明：实验结果能够被弱磁场中的电子能量弛豫率的增加导致二维热电子的磁冷却所解释．
Abstract The negative magnetoresistance effect of 2D hot electrons in GaAs-AlxGa1-x As heterostructures has been observed. As the electric field rises, the negative magnetoresistance effect become more obvious, and the amplitude of Δσ/σ(0) for high mobility samples can reach to 20%. It is indicated from a simple theoretical analysis that the experimental results are explained by a model based on an increase in.the electron energy relaxation rate, leading to 2D hot electron cooling, in a weak magnetic field
关键词
砷化镓
异质结
负阻效应
热电子
Heterojunctions
Magnetic properties
Molecular crystals
Negative resistance
