摘要
本文选用了Ｃｏ／Ｓｉ／ＧａＡｓ结构作为研究对象，经６００℃恒温退火及８００℃快速退火处理后，分别在ＧａＡｓ衬底上形成Ｃｏｓｉ２／ＧａＡｓＳｃｈｏｔｔｋｙ接触．采用多种薄膜和界面的测试技术，对ＣｏＳｉ２：／ＧａＡｓ的薄膜及界面特性进行了细致的研究．结果表明：热退大处理后，Ｃｏ／Ｓｉ经化学反应形成了较均匀的ＣｏＳｉ２单相，其薄膜电阻率约为３０μΩｃｍ．即使经９００℃的快速返火处理后，ＧａＡｓ界面仍保持相当的完整性，同时薄膜形貌也很理想．此外，采用Ｉ－Ｖ电学测试法对经７５０℃恒温退火处理后形成的ＣｏＳｉ２／ＧａＡＳＳｃｈｏｔｔｋｙ势垒进行测量，其势垒高度为ＢＨ＝０．７６ｅＶ；理想因子ｎ＝１．１４．因此，在ＧａＡｓＭＥＳＦＥＴ自对准工艺中ＣｏＳｉ２材料可望成为一种较理想的栅极材料．
Abstract CoSti2/GaAs Schottky contacts were formed from Co/Si/GaAs multilayer structure after furnace annealing (FA) at 600℃ for 30min, and rapid thermal annealing (RTA) at 800℃ for 30s. The characteristics of CoSt, thin film and CoSt,/GaAs interface have been studied in detail by using a variety of techniques including XRD, AES, SIMS, SEM etc.. A smooth CoSt, single phase could form from Co/Simultilayers aftel annealing under suitable conditions, and the resistance of CoSi2,thin. film formed is about 30μΩ. Even annealed (RTA) at 900℃, the interface of CoSi2,/GaAs still remained rather sharp and the morphology of CoSi2, thin film was very plain and no blistering was observed. CoSi2,/GaAs Schottky barriers have also been studied by using (I-V) electronic measurements. The barrier height after annealing at 750℃ for 30min is ΦBH=0.76eV, n=1.14. CoSi2/GaAs Schottky contact formed from Co/Si/GaAs structure could meet the demand of GaAs MESFETtechnology. CoSti2 may be a promising gate in self-aligned GaAs MESFET technology.
