摘要
详细研究了高压偏移栅Ｐ沟ＭＯＳＦＥＴ在Ｃｏ６０－γ，辐照下击穿电压随辐照剂量的变化关系．结果表明：击穿电压的辐照剂量响应与漂移区杂质面密度、漂移区长度、场板长度以及漏区结构有关．另外，γ辐照导致导通电阻增加．结果证实了我们以前提出的电离辐照引起击穿电压变化的机制．对实验现象给出了比较圆满的解释．结论对研制电离辐射加固高压偏移栅Ｐ沟ＭＯＳＦＥＴ具有重要的指导作用．
Abstract The effects of total dose exposure on the breakdown voltage of high voltage offset-gate P-channel MOSFETs, under 60Co irradiation are investigated. The results have shown that the total dose response of breakdown voltage is greatly dependent on the doping concentration in drift region, drift region length and field plate length, as well as the drain structure. In addition, on-resistance of drift region is increased after Gamma ray irradiation. From the experimental results, it is demonstrated that the mechanism of the change in breakdown voltage of offset-gate P-channel MOSFETs following irradiation proposed by us is valid. The experimental phenomena have been explained completely. The conclusions are useful for fabricatingradiation hardened high voltage offset-gate P-channel MOSFETs.
