摘要
本文采用由相似变换方法求解的二维泊松方程的结果直接用于推导近代ＭＯＳ场效应管的电流－电压特性，避免了过去在推导中引进的关于表面势的假设．所得到的电流模型适用于包括亚阈值工作区在内的不同工作区域．计及了纵向电场引起的载流子迁移率下降及速度饱和效应，得到了适用于短沟道ＭＯＳ管的电流公式．
Abstract used to derive the current-voltage characteristics, of modern MOS fiethod is transistors. The assumption about the surface potential introduced in previous derivation has been avoided. This current model is available to different opera.ting areas including the subthreshold area. The degradation of carrier mobility and velocity saturation effect caused by the vertical electric field are. considered to obtain the current performance for short channel MOS transistors.
