摘要
用氯氟酸硝酸水溶液对硅单晶抛光片进行染色腐蚀，制备了多孔硅．本文研究染色腐蚀多孔硅的光致可见光发光特性，特别是激发光强度和波长与发射光强度与波长的关系，多孔硅的稳定性和响应特性．
Abstract Porous Silicon material has been fabricated by stain-etching single crystalline silicon in HF and HNO3 solutions. We have studied the visible photoluminescence characteristics of porous silicon formed by above method, specially the dependence of PL emission intensities and wavelength peaks on excitation intensities and wavelength peaks, as well as the stability and transient response characteristics.
