摘要
三端电压控制型负阻器件(1)郭维廉(天津大学电子工程系300072)负阻器件从1952年埃伯斯(J.J.Ebers)[1]提出和1956年摩尔(J.L.MOMi)等[2]研制出晶闸管和1958年江崎[3]发现隧道二极管到现在已经近四十年了。在这一段时...
同被引文献18
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1郭维廉,李树荣,郑云光.光电负阻晶体管的初步研究[J].电子学报,1997,25(2):100-102. 被引量:13
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2沙亚男 李树荣 等.一种新型的光控脉冲振荡器.中国电子学会第11届全国半导体集成电路硅材料学术会议论文集[M].大连,1999.467-470.
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3Shimizu N, Nagatsuma J, Waho T. In0.53Ga0.47As/AlAs resonant tunneling diodes with switching time of 1.5 ps[J].Electronics Letters,1995;21(19):1 695-1 696.
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4Brown E R, Sǒderstrǒm J R,Parker C D. Oscillation up to 712 GHz in InAs/AlSb resonant tunneling diodes[J].Appl Phys Lett,1991;58(20):2 291-2 293.
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5Waho T, Chen K J, Yamamoto M. Resonant-tunneling diodes and HEMT logic circuits with multiple thresholds and multilevel output[J]. IEEE J of Solid-State Circuits,1998;33(2):208-274.
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6Chen K J, Waho T, Meazawa K. An exclusive-or logic circuit based on controlled quenching of series-connected negative differential resistance devices[J]. IEEE Electronic Deivce Lett, 1996;17(6):309-311.
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7Luryi S. Frequency limit of double-barrier resonant-tunneling oscillators[J]. Appl Phys Lett,1985;47(5):490-492.
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8Chen K J, Maezawa K, Yamamoto M. InP-base high-performance monostable-bistable transition logic elements (MOBILE's) using integrated multiple-input resonant-tunneling devices[J]. IEEE Electron Device Lett,1996;17(3):127-129.
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9Waho T, Chen K J, Yamamoto M. A novel multiple-valued logic gate using resonant tunneling devices[J]. IEEE Electron Device Lett,1996;17(5):223-225.
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10Seabaugh A, Brar B, Brockaert T. Resonant-tunneling mixed-signal circuit technology[J]. Solid-State Electronics,1999;43:1 355-1 365.
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1郭维廉.三端电压控制型负阻器件及其发展前景[J].半导体杂志,1990,15(4):39-47.
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2郭维廉.三端电压控制型负阻器件(5)[J].半导体杂志,1995,20(1):40-48.
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3郭维廉.三端电压控制型负阻器件(4)[J].半导体杂志,1994,19(4):28-35. 被引量:3
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4郭维廉.三端电压控制型负阻器件(2)[J].半导体杂志,1994,19(2):42-47. 被引量:2
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5郭维廉.三端电压控制型负阻器件(6)[J].半导体杂志,1995,20(2):34-43.
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6郭维廉.三端电压控制型负阻器件(7)[J].半导体杂志,1995,20(3):29-39. 被引量:1
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7杨维玉.双路交流供电自动切换装置[J].科技开发动态,2005(4):40-40.
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8武健,王蕊,张彩红,徐殿国.并联型MMC-MTDC系统直流故障特性分析及保护策略[J].电机与控制学报,2016,20(9):103-109. 被引量:5