SOI结构材料红外吸收光谱的研究

STUDY ON SOI STRUCTURE BY INFRARED ABSORPTION TECHNIQUE

用ＳＩＭＯＸ（Ｓｅｐａｒａｔｉｏｎｂｙ Ｉｍｐｌａｎｔｅｄ Ｏｘｙｇｅｎ，即氧注入隔离）技术制备ＳＯＩ－ＣＭＯＳ用的ＳＯＩ（Ｓｉｌｉｃｏｎ ＯｎＩｎｓｕ ｌａｔｏｒ，即绝缘体上长单晶硅膜）样品；对ＳＯＩ样品红外吸收光谱的分析，从而计算了ＳＯＩ结构材料中ＳｉＯ２埋层的厚度；测试样品不同点的红外吸收光谱，可考察样品ＳｉＯ２埋层厚度的不均匀性，据此，并可分析与之相关的ＳＯＩ样品的质量参数．这种分析方法，是一种无损的检测手段，具有实用价值．

SOI (Silicon On insulator) structure, being used for SOI-CMOS, have been formed by SIMOX (Separation by Implanted Oxygen) technique. The SOI wafer were analyzed by means of infrared absorption spectroscopy. The method can be used to determine the thickness of a buried SiO2 in the SOI wafer and to analyze the inhomogenlity of it as will as to evaluate the quality parameters of SOI structure. Such an analytical method will be of practical use for the rapidly developing SOI technique without destruction of the sample.