摘要
X光电子能谱表明,在Al-1.17%Cu合金氧化膜下的过饱和空位造成的空位坑中,有较大的Cu的偏聚。这种偏聚可用空位-Cu原子复合体扩散导致的非平衡偏聚理论来解释。
X-ray photoelectron spectroscopy shows that there is Cu segregation in vacancy condensation pits below oxidation layer of Al-1.17%Cu alloy sample. This phenomenon could be explained by Cu atom-vacancy complexes inducing non-equilibrium segregation.
出处
《北京科技大学学报》
EI
CAS
CSCD
北大核心
1994年第4期361-363,共3页
Journal of University of Science and Technology Beijing