Ti注入硅合成硅化物层精细结构分析

ANALYSIS FOR FINE STRUCTURE OF SYNTHESIS SILICIDES BY Ti IMPLANTATION SILICON

Ｔｉ离子注入硅化物已能得到特性优良的硅化物薄层，采用了深度分辨率高的掠角背散射和沟道技术发现注入层是３层结构：表面～１２０ｎｍ为合成的连续硅化钛多晶薄层，在该层中晶格无序程度达到４０％～５０％，中间层厚度约为２００ｎｍ的高密度的晶格损伤区，晶格损伤率在硅与硅化钛界面处最高，其值可达到７７％，并且随深度的增加而下降；第３层则是低密度晶格损伤层，束流密度的变化对晶格损伤率有一定的影响。

The good properties of Ti silicides thin film were obtained using Ti metallic ions implantation into silicon.It is found from channelled low angle emergence measurements with high depth resolution power that the structure of implanted region consists of three layers with different lattice distortion density.the sythetic continuous polycrystal titanium silicides layer with thickness of 100 nm to 120 nm is the surface layer.The lattice distortion ratio is 45%.Intermediate layer is the high density of defect layer with thickness of 200 nm,the lattice distortion ratio is the highest as 77%.The lattice distortion ratio decreases with increasing of depth.The third layer with thickness of 200 nm is low density of defects. The ion flux exerts an influence on the structure.