摘要
介绍了非晶硅薄膜的结构特点和在光电应用方面具有的独特性能,给出了非晶硅器件和材料制备的研究现状。
In this paper, the structural characteristics and the unique propertiesfor photoelectronic devices of a-Si thin films are described. The recent research and development of the a-Si devices and preparation technologies are also presented.
出处
《材料导报》
EI
CAS
CSCD
1994年第4期1-4,共4页
Materials Reports
关键词
氢化非晶硅
非晶硅基合金膜
非晶硅材料
hydrogenated amorphous silicon (a-Si) , amorphous silicon-based alloy film, solar cell, thin film transistor (TFT)
