纳米硅薄膜制备技术进展

Progress in the technology for preparation of nano-crystalline silicon films

本文综述了纳米硅薄膜制备新技术的进展。着重介绍了高氢稀释硅烷蚀刻法，微波氢基团增强化学气相沉积，逐层法和高频数值等离子体化学气相沉积技术制备纳米硅薄膜的沉积过程和生长机制．本文指出氢基团为各项新技术发展的关键并将在今后纳米硅薄膜制备技术发展中起重要作用。

The progress in the technology for preparation of nano-crystalline silicon(nc-Si: H) films has been reviewed. The review is centered mainly on introducing the growth process and mechanism of the nc-Si : H films, which include the high concentraction hydrogen diluted silane, microwave hydrogen radical-assisted chemical vapor deposition, layer by layer technique and veryhighfrequency digital chemical vapor deposition. This paper has pointed out that hydrogen radical is the key for the developing of the above nc-Si:H deposition technologys and will play important role in the future technology.