摘要
以稻壳为原料的国产BP-SiCw的生长机理为一维的VLS生长。BP-SiCw的直径变化规律遵守晶体一维VLD生长的直径变化规律。即:炉子加热功率的波动越大,晶须表面的粗糙现象越严重。保护气的热容量越大,和炉体进行的热交换量越多,生产出的BP-SiCw的直径也越粗。氢气氛下生产的BP-SiCw表面光洁度优于氩气氛下生产的BP-SiCw产品。
he microtructure and morphology of silicon carbide whiskers grown from rice hulls has ben studied by using TEM. The results show that silicon carbide whisker is one-dimension VLS growth process. The changing of furnace's power and heat lossing can affect the SiCw's morphology and diameter seriously. The largrr the furnace's power is,the rotigher the SiCw diameter is,the more the heat lossing is,the wider the SiCw diameter is. Not only diameter of SiCw is wider,but also the morphology of SiCw is rougher when Argon is used than Hydrogen.
出处
《材料工程》
EI
CAS
CSCD
北大核心
1994年第2期14-16,共3页
Journal of Materials Engineering
关键词
晶须
复合材料
生长机理
直径
稻壳
SiCw whisker,growth process, diameter, morphology