摘要
本文利用俄歇电子谱(AES)及透射电镜(TEM)对比分析了国产、日本、和西德热浸镀Al-2%Si钢带界面化合物层的厚度、结构和组成。结果表明,Si以Fe_2(AlSi)_5的形式存在于Fe_2Al_5结构的界面化合物中。与热浸镀Al相比,添加Si后导致界面化合物层厚度下降的原因在于Si填充了Fe_2Al_5结构中原子空位、阻碍了Al原子的扩散。
he thickness、structure and composition of the interfacial compound layer of steel strip of hot dippingAl-2%Si. which were from the native、Japan and West Germany, have been compared and investigatedby AES and TEM.The results show silicon would be rich preferentially in the interfacial compound layerwhose structure was the same as Fe_2Al_5 phase. and could be written as Fe_2 (AlSi )_5.The reason for reducingthe interfacial compound layer thickness during hot dip aluminizing after adding 2%silicon were that va-cant atom sites in the Fe_2 Al_5 were filled by Silicon and the diffusion of alunnnium through Which were in-hibited Other reason has also been found besides the function of silicon such as the forming of the interfa-cial aluminium oxide.
出处
《材料工程》
EI
CAS
CSCD
北大核心
1994年第8期13-15,共3页
Journal of Materials Engineering