多量子阱(MQW)增益导引锁相列阵激光器

Multiquantum Well (MQW) Gain guided Phase locked Arryay Laser

本文利用分子束外延（MBE）生长的多量子阱（MQW）晶片，通过二氧化硅（SiO2）掩模、Zn扩散等一系列工艺，实现十条增益导引激光器销相列阵。实验中观察到列阵器件远场图形呈双瓣状，单面连续最大输出功率为35mw，阈值电流为44mA，在脉冲状态下测得中心波长为7910。

In this paper, by means of Sio2 mask and Zn diffusion process,ten-element gain guided phase- locked laser arrays have been fabricated from multiquantum - well (MQW) heterostructure wafer grown by molecular beam expitaxy (MBE). Results are presented for arrays which reach a maximum cw output power of 35mw per facet and exhibit two-lobe far-field pattern with threshold current 440mA, center wawelength 7910. (puls).