摘要
报道了在SnO_2、ZnSnO_3基体材料中掺有α—Fe_2O_3金属氧化物作催化剂的半导体气敏材料的性能。实验表明,在不同基体材料中掺入不同比例的α—Fe_2O_3后,元件静态电阻R_0及元件对甲烷(CH_4)、丁烷、乙醇等气体性能随掺杂比例不同而改善,而对一氧化碳(CO)、汽油等气体性能改善不大。此外,α—Fe_2O_3掺杂使元件的可靠性、长期稳定性得到明显提高。
The properties of semiconductor gas-sensitive materials based on SnO2, ZnSnO_3 with doping ?-Fe_2O_3 as catalyst are reported. Experimental results show that Find: fferent base materials doping different percentag of ?-Fe_2O_3, static resistance R0 of the gas sensor and their sensitivities to methane (CH_4), butagas, alcohol were improved, but Sensitivities to carbon, petrol have no change, The stability and reliability of the gas sensors increased by dopeing ?-Fe_2O_3.
出处
《传感器技术》
CSCD
1994年第3期32-36,共5页
Journal of Transducer Technology