微电子技术中的半导体薄膜材料

SEMICONDUCTOR FILM MATERIALS IN MICROELECTRONICS

本文着重介绍了用于微电子技术的非晶态、宽带隙、纳米相、超晶格、量子微结构以及多孔硅等半导体薄膜材料，近年来在结构特征、物理性质以及器件应用等方面取得的某些新进展．并指出，原子组态的无序化，材料禁带的宽带隙化，能带剪裁的任意化以及人工结构的低维化和量子化，集中体现了半导体薄膜材料的发展特点。

This paper emphatically describes recent developments of the semiconductor film materials such as amorphous semiconductor,wide-gap material, nanometer sized structure, porous silicon,superlattice,and quantum microstructure are used for microelectronics, and point out that disordering of atomic structure, widening of material handgap, freedom of band cut-out, reducing of dimenesionality and quantizing of artificial material embody the development feature of the semiconductor film materials.