摘要
本文着重介绍了用于微电子技术的非晶态、宽带隙、纳米相、超晶格、量子微结构以及多孔硅等半导体薄膜材料,近年来在结构特征、物理性质以及器件应用等方面取得的某些新进展.并指出,原子组态的无序化,材料禁带的宽带隙化,能带剪裁的任意化以及人工结构的低维化和量子化,集中体现了半导体薄膜材料的发展特点。
This paper emphatically describes recent developments of the semiconductor film materials such as amorphous semiconductor,wide-gap material, nanometer sized structure, porous silicon,superlattice,and quantum microstructure are used for microelectronics, and point out that disordering of atomic structure, widening of material handgap, freedom of band cut-out, reducing of dimenesionality and quantizing of artificial material embody the development feature of the semiconductor film materials.
出处
《大自然探索》
1994年第1期42-48,共7页
Discovery of Nature
关键词
薄膜材料
半导体
微电子技术
film material,structurial and physical property, development feature