中子嬗变掺杂硅单晶pn结击穿特性的研究

Research on the Breakdown Performance of a pn Junction Manufactured with NTD Sillicon Crystal

对采用中子嬗变掺杂(NTD)技术生产硅单晶作了研究,给出了几种不同气氛下成晶的NTD硅单晶对器件性能影响的试验结果及数据分析.

The authors study the silicon crystal manufactured by NTD technology. The effect of NTD silicon crystal grown up at various atmosphere on the device performance is described, the test result and data analysis are provided.