1000A 2500V逆阻型GTO

1000A 2500V Reverse Blocking GTO Thyristor

论述了1000A,2500V大功率逆阻型可关断晶闸管(GTO)的基本设计原则,给出了主要工艺特征和元件的开关特性.采用改进的扩散工艺、掺氯氧化(TCE)和高能电子幅照技术,使逆阻型GTO的p基区杂质分布和n基区少子寿命达到了最佳化,从而获得了具有优良开关特性的GTO元件.

The paper describes the basic design considerations of high power reverse blocking GTO thyristor and gives its main technology features and switching characteristies. The usage of improved diffusion technology ,Cl-doped oxidation and high dosage electron irradiation technique makes the P-base doping distribution and N-base minority carrier lifetime optimized to gain good switching characteris- tics.