硅衬底—氧化锌膜声电器件
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2Ma Yizhun Wang Zhiguang Yao Cunfeng Zang Hang Gou Jie.Modification of ZnO Film Induced by 400 keV Xe^20＋ Irradiation[J].近代物理研究所和兰州重离子加速器实验室年报：英文版,2007(1):77-77.
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3代令,祁康成,林祖伦,陈文彬,李东方.LaB_6场发射阵列牺牲层制备工艺[J].强激光与粒子束,2009,21(6):923-926.
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4ZnO透明电极[J].液晶与显示,2007,22(3):277-277.
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5HOU Chang-min,HUANG Ke-ke,GAO Zhong-min,LI Xiang-shan,FENG Shou-hua,ZHANG Yuan-tao,ZHU Hui-chao,DU Guo-tong.Studies on Crystal Orientation of ZnO Film on Sapphire Using High-throughout X-ray Diffraction[J].Chemical Research in Chinese Universities,2007,23(1):1-4. 被引量：1
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6徐道连,钟先信,巫正中,陈文涛,李晓毅.微机械阵列滤波传声器的动态特性[J].重庆大学学报（自然科学版）,2002,25(12):28-30. 被引量：1
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7易贵华,尹洪禹.沉积ZnO膜的MOCVD装置的研制[J].真空,2001,38(6):23-25. 被引量：1
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8YIN JianBo,XIA HuaRong,LIANG Jia,ZHANG GengMin.Ultrathin ZnO membranes a few atomic layers in thickness[J].Science China(Technological Sciences),2014,57(2):315-321.
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9任鹏程,谭忠恪,罗文秀.对双光束激光诱导沉积氧化锌膜的电镜测定[J].分析测试学报,1994,13(4):17-20.
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10吕茂水,庞智勇,修显武,戴瑛,韩圣浩.Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J].Chinese Physics B,2007,16(2):548-552. 被引量：17
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