硅高效太阳电池的效率极限

The Efficiency Limit for silicon solar cell

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摘要提高硅太阳电池的转换效率主要在于提要开路电压V_(oc)和短路电流密度J_(DC),减薄基底的厚度和光陷井技术是获得极限转换效率——29%的主要途径. To improve the efficiency of silicon solar cell is depend on how to improve the open circuit voltage (Voc) and the short current density (Jsc). It is possible to get 29% efficiency by reducing wafer and light frapping technology.

作者蔡世俊李伟华

出处《电子器件》 CAS 1994年第1期34-39,共6页 Chinese Journal of Electron Devices

关键词硅单晶太阳电池转换效率光陷井

分类号 TM914.41 [电气工程—电力电子与电力传动]

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