反向刻蚀法制备场发射阴极阵列

Fabrication of Field Emission Arrays by Anixotropic Etching and Electrostatic Bonding Technlolgy

本文报道了硅各向异性腐蚀结合静电键合工艺制备出的大面积场发射阵列。阵列密度为１０￣６个／ｃｍ￣２，且具有良好的均匀性。该工艺简单、易于控制，是一种理想的制备场发射阵列的方法。

This paper reported the large -area field emission arrays fabricated by the anisotropic etching and bonding technology,the density of the arrays is 10￣6/cm￣3.The arrays alsohave very good uniformity.The technology,which is easy to control.is an ideal method to fabricate field cmission arrays.